MOS Device Physics
Delivery method: 16 hours of lecture with classroom and homework
problems. Students should bring a calculator to class.
Target audience: Engineers interested in MOS design, testing and processing
Course description: This course will provide an overview of MOS field effect
transistor device physics. The course will describe the operation and design
issues of p-n junctions, MOS capacitors and MOSFETs, point out applications
and discuss process integration, reliability and testing issues.
Reference: "Solid State Electronic Devices, 5th Edition" by B. Streetman and
S. Banerjee
Outline
1. Introduction to semiconductor physics
2. P-N junction d.c behavior
3. P-N junction capacitance-voltage and C-t analysis
4. MOS capacitor C-V and I-V
5. MOSFET design, analysis and scaling
6. Testing and test structures
