Ultra-Thin Gate Dielectrics and High-K Dielectrics

Outline:

• Review of CMOS technology scaling and short-channel device operation
• Physical and chemical properties of SiO2 and Si/SiO2 interface
• Oxynitride, nitride gate dielectrics and deuterium process
• High-K gate dielectrics and alternative gate electrodes
• Pre-oxidation cleaning and surface preparation
• Oxide reliability including breakdown models and lifetime extrapolation
• Reliability issues - SILC, soft breakdown, NBTI and boron penetration
• Poly-depletion effects and quantum mechanism
• Effects of plasma-induced damages