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Center for Lifelong Engineering Education The Universtiy of Texas at Austin Cockrell School of Engineering

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VLSI Device Operation, Physics and Technology

  • Effects of Technology Scaling on VLSI Devices and Basic Review
  • MOS Devices and Process Optimization

  • MOS Capacitors and Processing
    Flatband and Threshold Voltage
    Non-ideal MOS Capacitors and Effects of Oxidation Process
    Effects of Gate Oxide Process on Oxide Integrity
    MOS Characterization Techniques
  • MOSFET Scaling Effects and Process Solutions

  • Subthreshold Characteristics
    Effective Mobility and Velocity Saturation Effects
    Short-Channel and Narrow Channel Effects
    Reverse Short-Channel and Reverse Narrow Channel Effects
    Temperature Dependence and Process Optimization
    Drain-Induced Barrier Lowering (DIBL) and Punchthrough
    Hot-Carrier Effects and LDD Devices
    Gate-Induced Drain Leakage (GIDL)
    CMOS Latchup and Process Solution
  • Bipolar Junction Transistors

  • BiCMOS structures
    BJT operation and Gain Parameters
    High-level and Low-level Injection Effects
    Early Effects, Base Resistance Effects and Breakdown Voltages