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TOPICS
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VLSI Device Operation, Physics and Technology
- Effects of Technology Scaling on VLSI Devices and Basic
Review
- MOS Devices and Process Optimization
MOS Capacitors and Processing
Flatband and Threshold Voltage
Non-ideal MOS Capacitors and Effects of Oxidation Process
Effects of Gate Oxide Process on Oxide Integrity
MOS Characterization Techniques
- MOSFET Scaling Effects and Process Solutions
Subthreshold Characteristics
Effective Mobility and Velocity Saturation Effects
Short-Channel and Narrow Channel Effects
Reverse Short-Channel and Reverse Narrow Channel Effects
Temperature Dependence and Process Optimization
Drain-Induced Barrier Lowering (DIBL) and Punchthrough
Hot-Carrier Effects and LDD Devices
Gate-Induced Drain Leakage (GIDL)
CMOS Latchup and Process Solution
- Bipolar Junction Transistors
BiCMOS structures
BJT operation and Gain Parameters
High-level and Low-level Injection Effects
Early Effects, Base Resistance Effects and Breakdown Voltages
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